TPM2025

Automotive Dual-Channel Ultra-Highspeed GaN Predriver

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概述
开发资源
应用
订购明细

概述

The TPM2025 / TPM2025Q family are low-side dual- channel ultra-highspeed gate drivers for GaN and logic-level MOSFETs. It is optimized for high-speed applications such as Lidar and high-density power convertors with enhanced low propagation delay design. The TPM2025’s 2-mm×2-mm flip-chip QFN package minimizes parasitic inductance in the gate driver power loop and achieves state-of-the-art narrow pulse width as short as 0.69 ns. Channel independent transient suppressors ensure reliable operation with ultra-fast high-current output pulses.

Status

Production
Rating

Industrial
VIN (V)

4.75~5.25
Channel

2
Max Output Current (A)

7
Input Voltage Range (V)

0~5
Junction Temperature Range (℃)

-40 to +150
Rise/Fall Time (ns)

0.45/0.45
Propagation Delay (ns)

2
Delay Matching (ns)

0.05
Package

QFN2X2-10

开发资源

文档

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- 数据手册
- 选型手册
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- 技术文章
- 产品简介
- 用户指南
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- 文档名称
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- 日期
- Datasheet_TPM2025-TPM2025Q
  
  数据手册
  
  英文
  
  02/02/2024
  
  Automotive Dual-Channel Ultra-Highspeed GaN Predriver
- Introduction to Latch-up and the Preventive Measures
  
  技术文章
  
  英文
  
  01/19/2024
- Application Tips on ESD-EOS
  
  技术文章
  
  英文
  
  01/19/2024
- 思瑞浦模拟产品选型册
  
  选型手册
  
  中文
  
  01/19/2024